APT50GT120B2RDQ2G Datasheet, PDF (4/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
35
30
25
V_GE = 15V
20
15
10
V_CE = 800V
5 ^T_J ^{= 25°C, or 125°C}
R_G = 1.0Ω
L = 100µH
0
0
20 40 60 80 100 120
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
160
R_G = 1.0Ω, L = 100µH, V_CE = 800V
140
120
100
80
60
40
T_J = 25 or 125°C,V_GE = 15V
20
0
10
30
50
70
90
110
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
20,000
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
15,000
10,000
T_J = 125°C
5,000
T_J = 25°C
0
10
30
50
70
90
110
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
60,000
50,000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,100A
40,000
30,000
20,000
10,000
E 50A
on2,
0
E_off,100A
Eoff,50A E 25A
on2,
E_off,25A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT50GT120B2RDQ2G
300
250
200
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
150
100
50
V_CE = 800V
R_G = 1.0Ω
L = 100µH
0
0
20 40
60 80 100 120
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
R_G = 1.0Ω, L = 100µH, V_CE = 800V
50
40
T_J = 125°C, V_GE = 15V
30
20 ^T_J ^{= 25°C, V}_GE ^{= 15V}
10
0
10
30
50
70
90
110
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
6,000
5,000
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
T_J = 125°C
4,000
3,000
2,000
1,000
T_J = 25°C
0
10
30
50
70
90
110
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
20,000
V_CE = 800V
V_GE = +15V
R_G = 1.0Ω
E_on2,100A
15,000
10,000
5,000
E_on2,50A
E_off,100A
E_off,50A
E_on2,25A
0
E_off,25A
0
25
50
75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature