APT50GT120B2RDQ2G Datasheet, PDF (2/9 Pages) Microsemi Corporation – Thunderbolt IGBT

Dynamic Characteristic
Symbol Characteristic
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
SSOA _{Switching Safe Operating Area}
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Test Conditions
V_GE = 0V, V_CE = 25V
f = 1MHz
Gate Charge
V_GE = 15V
V_CE= 600V
I_C = 50A
T_J = 150°C, R_G = 1.0Ω ⁷, V_GE = 15V,
L = 100μH, V_CE= 1200V
Inductive Switching (25°C)
V_CC = 800V
V_GE = 15V
I_C = 50A
R_G = 4.7Ω
T_J = +25°C
Inductive Switching (125°C)
V_CC = 800V
V_GE = 15V
I_C = 50A
R_G = 4.7Ω
T_J = 125°C
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
R_θJC
R_θJC
W_T
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
APT50GT120B2RDQ2R
Min Typ Max Unit
- 1650
-
-
250
-
pF
-
110
-
-
10.5
-
V
-
340
-
-
40
-
nC
-
210
-
150
A
-
24
-
-
53
-
ns
-
230
-
-
26
-
-
TBD
-
- 5330
-
µJ
- 2033
-
-
24
-
-
53
-
ns
-
255
-
-
48
-
-
TBD
-
- 5670
-
µJ
- 2850
-
Min Typ Max Unit
0.20 °C/W
0.80
6.2
g
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.