APT200GN60B2G Datasheet, PDF (6/6 Pages) Microsemi Corporation – Field Stop IGBT

APT100DQ60
V_CC
I_C
V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
t_d(off)
T_J = 125°C
10%
t_d(on)
t_r
90%
5%
10%
Switching Energy
APT200GN60B2G
Gate Voltage
T_J = 125°C
Collector Current
5%
Collector Voltage
Figure 22, Turn-on Switching Waveforms and Definitions
Collector Voltage
Collector Current
Switching Energy
90%
t_f
10%
0
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX^® Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.