APT200GN60B2G Datasheet, PDF (3/6 Pages) Microsemi Corporation – Field Stop IGBT

Typical Performance Curves
400
350
V_GE = 15V
300
250
T_J= 25°C
200
T_J= 125°C
150
100
50
T_J= 150°C
T_J= 55°C
0
0 0.5 1 1.5 2 2.5 3
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
400
350
250μs PULSE
TEST<0.5 % DUTY
CYCLE
T_J= 150°C
T_J= 125°C
300
T_J= -55°C
250
T_J= 25°C
200
150
100
50
0
02
4
6
8 10 12
V_CE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
2.5
I_C = 400A
2.0
I_C = 200A
1.5
1.0
I_C = 100A
0.5
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
450
15V
400
13V
350
APT200GN60B2G
300
12V
250
9V
200
8.5V
150
8V
100
7.5V
50
7V
0
0 4 8 12 16 20 24 28 32
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 200A
14
T_J = 25°C
V_CE = 120V
12
V_CE = 300V
10
V_CE = 480V
8
6
4
2
0 _{0 200 400 600 800 1000 1200 1400 1600}
GATE CHARGE (nC)
FIGURE 4, Gate charge
3.0
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
2.5
I_C = 400A
2.0
I_C = 200A
1.5
I_C = 100A
1.0
0.5
0
0 25 50 75 100 125 150 175
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
500
450
400
350
300
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature