APT200GN60B2G Datasheet, PDF (5/6 Pages) Microsemi Corporation – Field Stop IGBT

Typical Performance Curves
100,000
C_ies
10,000
1,000
C_oes
C_res
100
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT200GN60B2G
700
600
500
400
300
200
100
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.14
0.12
D = 0.9
0.10
0.7
0.08
0.5
0.06
Note:
0.3
0.04
t1
t2
0.02
0.1
0.05
0
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.032
0.099
.000443
.0058601
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
70
T_J = 125°C
60
T_C = 75°C
D = 50 %
V_CE = 400V
50
R_G = 1.0Ω
40
F
max
=
min
(f_max,
f
max2⁾
0.05
30
75°C
f_max1 = _{t d(on) + tr + td(off) + tf}
20
10
0
0
100°C
f_max2 =
P_diss - P _cond
E _on2 + E _off
P_diss =
T_J - T _C
R _θJC
50 100 150 200 250 300
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current