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APT200GN60B2G Datasheet, PDF (4/6 Pages) Microsemi Corporation – Field Stop IGBT
Typical Performance Curves
60
50
VGE = 15V
40
30
20
VCE = 400V
10 TJ = 25°C, or 125°C
RG = 1.0Ω
L = 100μH
0
40 80 120 160 200 240 280 320
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
180
RG = 1.0Ω, L = 100μH, VCE = 400V
160
140
120
100
80
60
40
TJ = 25 or 125°C,VGE = 15V
20
0
40 80 120 160 200 240 280 320
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
35
VCE = 400V
VGE = +15V
30 RG = 1.0Ω
25
TJ = 125°C
20
15
10
5
TJ = 25°C
0
40 80 120 160 200 240 280 320
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
70
VCE = 400V
VGE = +15V
60 TJ = 125°C
Eoff,400A
50
Eon2,400A
40
Eoff,200A
30
Eon2,200A
20
Eoff,100A
10
Eon2,100A
0
0
5
10
15
20
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT200GN60B2G
800
700
600
500
VGE =15V,TJ=125°C
400
VGE =15V,TJ=25°C
300
200
100
VCE = 400V
RG = 1.0Ω
L = 100μH
0
40 80 120 160
200 240 280 320
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
RG = 1.0Ω, L = 100μH, VCE = 400V
200
150
TJ = 25°C, VGE = 15V
100
50
TJ = 125°C, VGE = 15V
0
40 80 120 160 200 240 280 320
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
25
VCE = 400V
VGE = +15V
RG = 1.0Ω
20
TJ = 125°C
15
10
TJ = 25°C
5
0
40 80 120 160 200 240 280 320
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
35
VCE = 400V
VGE = +15V
30 RG = 1.0Ω
Eon2,400A
25
Eoff,400A
20
Eon2,200A
15
Eoff,200A
10
Eon2,100A
5
Eoff,100A
0
0
25
50
75 100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature