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| APT200GN60B2G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Field Stop IGBT | |||
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APT200GN60B2G
600V, VCE(ON) = 1.45V Typical
Field Stop IGBT
Utilizing the latest Field Stop and Trench Gate technologies, these IGBTâs have ultra low VCE(ON) and
are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling
is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefï¬cient. A
built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low
gate charge simpliï¬es gate drive design and minimizes losses.
⢠1200V Field Stop
⢠Trench Gate: Low VCE(ON)
⢠Easy Paralleling
⢠Integrated Gate Resistor :Low EMI, High Reliability
⢠RoHS Compliant
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
Maximum Ratings
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
Ratings
Unit
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ, TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063â from Case for 10 Sec.
600
±20
283
158
600
600A @ 600V
682
-55 to 175
300
Volts
Amps
Watts
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)
Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
Min Typ Max
600
-
-
5.0
5.8
6.5
1.05 1.45 1.85
-
1.65
-
-
-
25
-
-
1000
-
-
600
-
2
-
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
Volts
μA
nA
Ω
Microsemi Website - http://www.microsemi.com
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