APT200GN60B2G Datasheet, PDF (2/6 Pages) Microsemi Corporation – Field Stop IGBT

Dynamic Characteristics
APT200GN60B2G
Symbol Characteristic
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
SSOA _{Switching Safe Operating Area}
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy ⁴
Turn-On Switching Energy ⁵
Turn-Off Switching Energy ⁶
Test Conditions
Min Typ
V_GE = 0V, V_CE = 25V
f = 1MHz
- 14100
-
461
-
393
Gate Charge
-
V_GE = 15V
-
V_CE= 300V
-
I_C = 100A
-
T_J = 150°C, R_G = 1.0Ω ⁷, V_GE = 15V, ₆₀₀
L = 100μH, V_CE= 600V
-
8.2
1180
85
660
50
Inductive Switching (25°C)
V_CC = 400V
V_GE = 15V
I_C = 200A
R_G = 1.0Ω
T_J = +25°C
-
80
-
560
-
100
-
13
-
15
-
11
-
50
Inductive Switching (125°C)
V_CC = 400V
V_GE = 15V
I_C = 200A
R_G = 1.0Ω
T_J = +125°C
-
80
-
620
-
70
-
14
-
16
-
10
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
V
nC
A
ns
mJ
ns
mJ
Thermal and Mechanical Characteristics
Symbol ^{Characteristic / Test Conditions}
Min Typ Max Unit
R_θJC Junction to Case (IGBT)
-
-
0.13 °C/W
R_θJC Junction to Case (DIODE)
-
-
N/A
W_T
Package Weight
-
6.1
-
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E_on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R_G is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.