PC28F512P30EFA Datasheet, PDF (75/92 Pages) Micron Technology – Micron Parallel NOR Flash Embedded Memory (P30-65nm)

512Mb, 1Gb, 2Gb: P30-65nm
DC Electrical Specifications
Table 35: DC Current Characteristics (Continued)
Parameter
V_PP erase current
V_PP blank check
Notes:
CMOS Inputs
(V_CCQ = 1.7–
3.6V)
TTL Inputs
(V_CCQ = 2.4–
3.6V)
Symbol Typ Max Typ Max Unit Test Conditions
Notes
I_PPE
0.05 0.1 0.05 0.1 mA V_PP = V_PPL, erase in progress
3
0.05 0.1 0.05 0.1
V_PP = V_PPH, erase in progress
I_PPBC 0.05 0.1 0.05 0.1 mA V_PP = V_PPL
3
0.05 0.1 0.05 0.1
V_PP = V_PPH
1. All currents are RMS unless noted. Typical values at TYP V_CC, T_C = +25°C.
2. I_CCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-
ted.
3. Sampled, not 100% tested.
4. I_CCES is specified with the device deselected. If device is read while in erase suspend, cur-
rent is I_CCES plus I_CCR.
5. I_CCW, I_CCE measured over TYP or MAX times specified in (page 0 ).
6. if V_IN > V_CC, the input load current increases to 10µA MAX.
7. the I_PPS,I_PPWS,I_PPES will increase to 200µA when V_PP/WP# is at V_PPH.
Table 36: DC Voltage Characteristics
Parameter
Symbol
CMOS Inputs
(V_CCQ = 1.7–3.6V)
Min
Max
TTL Inputs¹
(V_CCQ = 2.4–3.6V)
Min
Max
Unit Test Conditions
Notes
Input low voltage
V_IL
–0.5
0.4
–0.5
0.6
V
2
Input high voltage
V_IH
V_CCQ - 0.4 V_CCQ + 0.5
2
V_CCQ + 0.5 V
Output low voltage
V_OL
–
0.2
–
0.2
V V_CC = V_CC (MIN)
V_CCQ = V_CCQ (MIN)
I_OL = 100µA
Output high voltage
V_OH V_CCQ - 0.2
–
V_CCQ – 0.2
–
V V_CC = V_CC (MIN)
V_CCQ = V_CCQ (MIN)
I_OH = –100µA
V_PP lock out voltage
V_PPLK
–
0.4
–
0.4
V
3
Notes:
1. Synchronous read mode is not supported with TTL inputs.
2. V_IL can undershoot to –1.0V for durations of 2ns or less and V_IH can overshoot to V_CCQ +
1.0V for durations of 2ns or less.
3. V_PP ≤ V_PPLK inhibits ERASE and PROGRAM operations. Do not use V_PPL and V_PPH outside
their valid ranges.
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
75
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