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PC28F512P30EFA Datasheet, PDF (1/92 Pages) Micron Technology – Micron Parallel NOR Flash Embedded Memory (P30-65nm) | |||
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512Mb, 1Gb, 2Gb: P30-65nm
Features
Micron Parallel NOR Flash Embedded
Memory (P30-65nm)
JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx,
PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx
JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx,
PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,
RC28F00AP30BFx, RC28F00AP30TFx, PC28F00BP30EFx
Features
⢠High performance
⢠Easy BGA package features
â 100ns initial access for 512Mb, 1Gb Easy BGA
â 105ns initial access for 2Gb Easy BGA
â 25ns 16-word asychronous page read mode
â 52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
â 4-, 8-, 16-, and continuous word options for burst
mode
⢠TSOP package features
â 110ns initial access for 512Mb, 1Gb TSOP
⢠Both Easy BGA and TSOP package features
â Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
â 1.8V buffered programming at 1.46 MB/s (TYP)
using a 512-word buffer
⢠Architecture
â MLC: highest density at lowest cost
â Symmetrically blocked architecture (512Mb, 1Gb,
2Gb)
â Asymmetrically blocked architecture (512Mb,
1Gb); four 32KB parameter blocks: top or bottom
configuration
â 128KB main blocks
â Blank check to verify an erased block
⢠Voltage and power
â VCC (core) voltage: 1.7â2.0V
â VCCQ (I/O) voltage: 1.7â3.6V
â Standy current: 70µA (TYP) for 512Mb; 75µA
(TYP) for 1Gb
â 52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
⢠Security
â One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
â Absolute write protection: VPP = VSS
â Power-transition erase/program lockout
â Individual zero-latency block locking
â Individual block lock-down
â Password access
⢠Software
â 25μs (TYP) program suspend
â 25μs (TYP) erase suspend
â Flash Data Integrator optimized
â Basic command set and extended function Inter-
face (EFI) command set compatible
â Common flash interface
⢠Density and Packaging
â 56-lead TSOP package (512Mb, 1Gb)
â 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)
â 16-bit wide data bus
⢠Quality and reliabilty
â JESD47 compliant
â Operating temperature: â40°C to +85°C
â Minimum 100,000 ERASE cycles per block
â 65nm process technology
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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