PC28F00BP30EFA Datasheet, PDF (63/86 Pages) Micron Technology – Numonyx® Axcell™ P30-65nm Flash Memory

P30-65nm
Table 32: CFI Identification
Offset Length
Description
10h
3
Query-unique ASCII string “QRY”.
Primary Vendor command set and control interface ID code.
13h
2
16-bit ID code for Vendor-specified algorithms.
15h
2
Extended Query Table primary algorithm address.
Alternate vendor command set and control interface ID code.
17h
2
0000h means no second vendor-specified algorithm exists.
Secondary algorithm Extended Query Table address.
19h
2
0000h means none exists.
Add.
10:
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
Hex
Code
--51
--52
--59
--01
--00
--0A
--01
--00
--00
--00
--00
Value
“Q”
“R”
“Y”
Table 33: System Interface Information
Offset Length
Description
Add
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
VCC logic supply minimum program/erase voltage
1
bits 0-3 BCD 100 mV
1B:
bits 4-7 BCD volts
VCC logic supply maximum program/erase voltage
1
bits 0-3 BCD 100 mV
1C:
bits 4-7 BCD volts
VPP [programming] supply minimum program/erase voltage
1
bits 0-3 BCD 100 mV
1D:
bits 4-7 HEX volts
VPP [programming] supply maximum program/erase voltage
1
bits 0-3 BCD 100 mV
1E:
bits 4-7 HEX volts
1
“n” such that typical single word program time-out = 2ⁿ µ-sec 1F:
1
“n” such that typical full buffer write time-out = 2ⁿ µ-sec
20:
1
“n” such that typical block erase time-out = 2ⁿ m-sec
21:
1
“n” such that typical full chip erase time-out = 2ⁿ m-sec
22:
1
“n” such that maximum word program time-out = 2ⁿ times
typical
23:
1
“n” such that maximum buffer write time-out = 2ⁿ times
typical
24:
1
“n” such that maximum block erase time-out = 2ⁿ times
typical
25:
1
“n” such that maximum chip erase time-out = 2ⁿ times typical 26:
Hex
Code
--17
--20
--85
--95
--09
--0A
--0A
--00
--01
--02
--02
--00
Value
1.7V
2.0V
8.5V
9.5V
512µs
1024µs
1s
NA
1024µs
4096µs
4s
NA
Datasheet
63
Sept 2012
Order Number:208042-06