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PC28F00BP30EFA Datasheet, PDF (47/86 Pages) Micron Technology – Numonyx® Axcell™ P30-65nm Flash Memory
P30-65nm
14.0
14.1
Electrical Specifications
DC Current Characteristics
Table 21: DC Current Characteristics (Sheet 1 of 2)
Symb
Parameter
CMOS Inputs
(VCCQ =
1.7V - 3.6V)
TTL Inputs
(VCCQ =
2.4V - 3.6V)
Unit
Test Conditions
Notes
Typ Max Typ Max
ILI Input Load Current
512-Mbit/
1-Gbit
-
±1
-
±2
VCC = VCC Max
µA VCCQ = VCCQ Max
2-Gbit
-
±2
-
±4
VIN = VCCQ or VSS
1,6
Output Leakage
ILO Current
512-Mbit/
1-Gbit
-
±1
-
±10
VCC = VCC Max
µA VCCQ = VCCQ Max
DQ[15:0], WAIT
2-Gbit
-
±2
-
±20
VIN = VCCQ or VSS
ICCS, VCC Standby,
ICCD Power-Down
512-Mbit
70
225
70
225
VCC = VCC Max
VCCQ = VCC Max
1-Gbit
75
240
75
240
µA
CE# =VCCQ
RST# = VCCQ (for ICCS)
1,2
2-Gbit
150 480 150 480
RST# = VSS (for ICCD)
WP# = VIH
Asynchronous Single-
Word f = 5MHz (1 CLK)
26
31
26
31
mA
16-Word
Read
Average
Page-Mode Read
f = 13MHz (17 CLK)
12
16
12
16
mA
16-Word
Read
VCC = VCCMax
CE# = VIL
ICCR VCC Read
19
22
19
22
mA 8-Word Read OE# = VIH
1
Current
Synchronous Burst
f = 52MHz, LC=4
16
18
16
18
mA
16-Word
Read
Inputs: VIL or
VIH
21
24
21
24
mA
Continuous
Read
ICCW, VCC Program Current,
ICCE VCC Erase Current
35
50
35
50
VPP = VPPL, Pgm/Ers in progress 1,3,5
mA
35
50
35
50
VPP = VPPH, Pgm/Ers in progress 1,3,5
ICCWS
VCC Program Suspend
Current,
512-Mbit
70
225
70
225
,
ICCES
VCC Erase
Suspend Current
1-Gbit
75
240
75
240
µA
CE# = VCCQ; suspend in
progress
2-Gbit
75
240
75
240
1,3,4
IPPS,
IPPWS
,
IPPES
VPP Standby Current,
VPP Program Suspend
Current,
VPP Erase Suspend
Current
IPPR VPP Read
IPPW VPP Program Current
IPPE VPP Erase Current
512-Mbit
1-Gbit
2-Gbit
0.2
0.2
0.4
2
0.05
0.05
0.05
0.05
5
0.2
5
0.2
10
0.4
15
0.10
0.10
0.10
0.10
2
0.05
0.05
0.05
0.05
5
5
10
15
0.10
0.10
0.10
0.10
µA VPP = VPPL, suspend in progress 1,3,7
µA VPP = VPPL
1,3
VPP = VPPL, program in progress
mA
3
VPP = VPPH, program in progress
VPP = VPPL, erase in progress
mA
3
VPP = VPPH, erase in progress
Datasheet
47
Sept 2012
Order Number:208042-06