PC28F00BP30EFA Datasheet, PDF (59/86 Pages) Micron Technology – Numonyx® Axcell™ P30-65nm Flash Memory

P30-65nm
15.5 Program and Erase Characteristics
Table 27: Program and Erase Specifications
Num
Symbol
Parameter
Min
V_PPL
Typ Max
V_PPH
Min Typ Max
Unit
Note
Conventional Word Programming
W200
t_PROG/W
Program
Time
Single word
-
270 456
-
270 456
µs
1
Buffered Programming
Aligned 32-Wd, BP time
(32 Words)
-
310 716
-
310 716
Aligned 64-Wd, BP time
(64 Word)
-
310 900
-
310 900
W250
t_PROG
Program
Time
Aligned 128-Wd, BP time
(128 Words)
-
375 1140 -
375 1140 µs
1
Aligned 256-Wd, BP time
(256 Words)
-
505 1690 -
505 1690
one full buffer (512
Words)
-
900 3016 -
900 3016
Buffered Enhanced Factory Programming
W451
W452
t_BEFP/B
t_BEFP/Setup
Program
Single byte
BEFP Setup
n/a n/a n/a
-
0.5
-
n/a n/a n/a 20
-
-
Erase and Suspend
1,2
µs
1
W501
t_ERS/AB
Erase Time 128-KByte Array Block
-
0.8 4.0
-
0.8 4.0
s
W600
W601
W602
t_SUSP/P
t_SUSP/E
t_ERS/SUSP
Suspend
Latency
Program suspend
Erase suspend
Erase to Suspend
-
25
30
-
25
30
-
500
-
-
25
30
1
-
25
30
µs
-
500
-
1,3
blank check
W702
t_BC/AB
Blank
Check
Array Block
-
3.2
-
-
3.2
-
ms
-
Notes:
1.
Typical values measured at T_C = +25°C and nominal voltages. Performance numbers are valid for all speed versions.
Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
3.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
Datasheet
59
Sept 2012
Order Number:208042-06