English
Language : 

MT46V32M8P-5BK Datasheet, PDF (49/91 Pages) Micron Technology – Double Data Rate (DDR) SDRAM
256Mb: x4, x8, x16 DDR SDRAM
Commands
READ
Figure 9:
The READ command is used to initiate a burst read access to an active row, as shown in
Figure 9 on page 49. The value on the BA0, BA1 inputs selects the bank, and the address
provided on inputs A[i:0] (where Ai is the most significant column address bit for a given
density and configuration, see Table 2 on page 2) selects the starting column location.
READ Command
CK#
CK
CKE HIGH
CS#
RAS#
CAS#
WE#
Address
A10
Col
EN AP
DIS AP
BA0, BA1
Bank
Don’t Care
Note: EN AP = enable auto precharge; DIS AP = disable auto precharge.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 9/12 EN
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.