MT46V32M8P-5BK Datasheet, PDF (38/91 Pages) Micron Technology – Double Data Rate (DDR) SDRAM

256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
Figure 4:
Figure 5:
38c. The full driver pull-up current variation from MIN to MAX process; temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 5 on
page 38.
38d. The driver pull-up current variation within nominal limits of voltage and temper-
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 5 on page 38.
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
38f. The full ratio variation of the nominal pull-up to pull-down current should be
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
Full Drive Pull-Down Characteristics
160
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
V_OUT (V)
Full Drive Pull-Up Characteristics
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
0.0
0.5
1.0
1.5
2.0
2.5
V_DDQ - V_OUT (V)
39. Reduced output drive curves:
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 6 on page 39.
39b. The driver pull-down current variation, within nominal voltage and temperature
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 6 on page 39.
39c. The full driver pull-up current variation from MIN to MAX process; temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 7.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. S, Core DDR: Rev. E 9/12 EN
38
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