MT47H64M16HR-25ELH Datasheet, PDF (48/132 Pages) Micron Technology – 1Gb: x4, x8, x16 DDR2 SDRAM

1Gb: x4, x8, x16 DDR2 SDRAM
Output Electrical Characteristics and Operating Conditions
Table 19: Output Characteristics
Parameter
Output impedance
Pull-up and pull-down mismatch
Output slew rate
Min
Nom
Max
See Output Driver Characteristics (page 49)
0
–
4
1.5
–
5
Units
˖
˖
V/ns
Notes
1, 2
1, 2, 3
1, 4, 5, 6
Notes:
1. Absolute specifications: 0°C ื T_C ื +85°C; V_DDQ = 1.8V ±0.1V, V_DD = 1.8V ±0.1V.
2. Impedance measurement conditions for output source DC current: V_DDQ = 1.7V;
V_OUT = 1420mV; (V_OUT - V_DDQ)/I_OH must be less than 23.4˖ for values of V_OUT between
V_DDQ and V_DDQ - 280mV. The impedance measurement condition for output sink DC cur-
rent: V_DDQ = 1.7V; V_OUT = 280mV; V_OUT/I_OL must be less than 23.4˖ for values of V_OUT
between 0V and 280mV.
3. Mismatch is an absolute value between pull-up and pull-down; both are measured at
the same temperature and voltage.
4. Output slew rate for falling and rising edges is measured between V_TT - 250mV and
V_TT + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew
rate is measured between DQS - DQS# = –500mV and DQS# - DQS = 500mV. Output slew
rate is guaranteed by design but is not necessarily tested on each device.
5. The absolute value of the slew rate as measured from V_IL(DC)max to V_IH(DC)min is equal to
or greater than the slew rate as measured from V_IL(AC)max to V_IH(AC)min. This is guaran-
teed by design and characterization.
6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when T_C is between –
40°C and 0°C.
Figure 14: Output Slew Rate Load
V_TT = V_DDQ/2
25ȍ
Output
(V_OUT)
Reference
point
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. X 10/11 EN
48
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