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MT44K32M18 Datasheet, PDF (31/111 Pages) Micron Technology – 576Mb: x18, x36 RLDRAM 3
Advance
576Mb: x18, x36 RLDRAM 3
ODT Characteristics
fication requirements; however, they can be used as design guidelines to indicate what
RTT is targeted to provide:
• RTT 120Ω is made up of RTT120(PD240) and RTT120(PU240).
• RTT 60Ω is made up of RTT60(PD120) and RTT60(PU120).
• RTT 40Ω is made up of RTT40(PD80) and RTT40(PU80).
Table 16: RTT Effective Impedances
RTT
120Ω
120Ω
60Ω
60Ω
40Ω
40Ω
Resistor
RTT120(PD240)
RTT120(PU240)
RTT60(PD120)
RTT60(PU120)
RTT40(PD80)
RTT40(PU80)
VOUT
0.2 x VDDQ
0.5 x VDDQ
0.8 x VDDQ
0.2 x VDDQ
0.5 x VDDQ
0.8 x VDDQ
VIL(AC) to
VIH(AC)
0.2 x VDDQ
0.5 x VDDQ
0.8 x VDDQ
0.2 x VDDQ
0.5 x VDDQ
0.8 x VDDQ
VIL(AC) to
VIH(AC)
0.2 x VDDQ
0.5 x VDDQ
0.8 x VDDQ
0.2 x VDDQ
0.5 x VDDQ
0.8 x VDDQ
VIL(AC) to
VIH(AC)
Min
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
Units
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/4
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/6
PDF: 09005aef84003617
576mb_rldram3.pdf – Rev. B 1/12 EN
31
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