MT9VDDT6472HG Datasheet, PDF (3/18 Pages) Micron Technology – DDR SDRAM SODIMM

128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SODIMM
Features
Table 5:
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V64M8,¹ 512Mb DDR SDRAM
Part Number²
MT9VDDT6472HG-40B__
MT9VDDT6472HY-40B__
MT9VDDT6472HG-335__
MT9VDDT6472H(I)Y-335__
MT9VDDT6472HG-26A__
MT9VDDT6472HG-265__
Module
Density
512MB
512MB
512MB
512MB
512MB
512MB
Configuration
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
Module
Bandwidth
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
Memory Clock/
Data Rate
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Clock Cycles
(CL-^tRCD-^tRP)
3-3-3
3-3-3
2.5-3-3
2.5-3-3
2-3-3
2.5-3-3
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT9VDDT6472HY-335J1.
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. F 3/12 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved