MT9VDDT6472HG Datasheet, PDF (10/18 Pages) Micron Technology – DDR SDRAM SODIMM

128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SODIMM
Electrical Specifications
I_DD Specifications
Table 10:
I_DD Specifications and Conditions – 128MB (Die Revision D)
Values are shown for the MT46V16M8 DDR SDRAM only and are computed from values specified in the
128Mb (16 Meg x 8) component data sheet
Parameter/Condition
Operating one bank active-precharge current:
t_{RC =} t_{RC (MIN);} t_{CK =} t_{CK (MIN); DQ, DM, and DQS inputs}
changing once per clock cycle; Address and control inputs
changing once every two clock cycles
Operating one bank active-read-precharge current:
BL = 4; ^tRC = ^tRC (MIN); ^tCK = ^tCK (MIN); I_OUT = 0mA; Address
and control inputs changing once per clock cycle
Precharge power-down standby current: All device banks
idle; Power-down mode; ^tCK = ^tCK (MIN); CKE = LOW
Idle standby current: CS# = HIGH; All device banks idle;
t_{CK =} t_{CK (MIN); CKE = HIGH; Address and other control inputs}
changing once per clock cycle; V_IN = V_REF for DQ, DM, and DQS
Active power-down standby current: One device bank
active; Power-down mode; ^tCK = ^tCK (MIN); CKE = LOW
Active standby current: CS# = HIGH; CKE = HIGH; One
device bank active; ^tRC = ^tRAS (MAX); ^tCK = ^tCK (MIN); DQ,
DM, and DQS inputs changing twice per clock cycle; Address
and other control inputs changing once per clock cycle
Operating burst read current: BL = 2; Continuous burst
reads; One device bank active; Address and control inputs
changing once per clock cycle; ^tCK = ^tCK (MIN); I_OUT = 0mA
Operating burst write current: BL = 2; Continuous burst
writes; One device bank active; Address and control inputs
changing once per clock cycle; ^tCK = ^tCK (MIN); DQ, DM, and
DQS inputs changing twice per clock cycle
Auto refresh current
t_{REFC =} t_RFC
(MIN)
t_{REFC = 15.625µs}
Self refresh current: CKE  0.2V
Operating bank interleave read current: Four device bank
interleaving reads (BL = 4) with auto precharge; ^tRC = ^tRC
(MIN); ^tCK = ^tCK (MIN); Address and control inputs change
only during active READ or WRITE commands
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD5A
I_DD6
I_DD7
-335
1125
1215
27
405
225
450
1260
1260
2385
45
36
3195
-262
990
-26A/
-265
945
Units
mA
1080
1080
mA
27
27
mA
405
360
mA
225
180
mA
450
405
mA
1170
1125
mA
1125
1080
mA
1980
1980
mA
45
45
36
36
mA
2970
2925
mA
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. F 3/12 EN
10
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