MT9VDDT6472HG Datasheet, PDF (12/18 Pages) Micron Technology – DDR SDRAM SODIMM

128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SODIMM
Electrical Specifications
Table 12:
I_DD Specifications and Conditions – 256MB (Die Revision K)
Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the
256Mb (32 Meg x 8) component data sheet
Parameter/Condition
Operating one bank active-precharge current: ^tRC = ^tRC (MIN);
t_{CK =} t_{CK (MIN); DQ, DM, and DQS inputs changing once per clock}
cycle; Address and control inputs changing once every two clock
cycles
Operating one bank active-read-precharge current: BL = 4;
t_{RC =} t_{RC (MIN);} t_{CK =} t_{CK (MIN); IOUT = 0mA; Address and control}
inputs changing once per clock cycle
Precharge power-down standby current: All device banks idle;
Power-down mode; ^tCK = ^tCK (MIN); CKE = LOW
Idle standby current: CS# = HIGH; All device banks idle;
t_{CK =} t_{CK (MIN); CKE = HIGH; Address and other control inputs}
changing once per clock cycle; V_IN = V_REF for DQ, DM, and DQS
Active power-down standby current: One device bank active;
Power-down mode; ^tCK = ^tCK (MIN); CKE = LOW
Active standby current: CS# = HIGH; CKE = HIGH; One device bank
active; ^tRC = ^tRAS (MAX); ^tCK = ^tCK (MIN); DQ, DM, and DQS inputs
changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
Operating burst read current: BL = 2; Continuous burst reads; One
device bank active; Address and control inputs changing once per
clock cycle; ^tCK = ^tCK (MIN); I_OUT = 0mA
Operating burst write current: BL = 2; Continuous burst writes;
One device bank active; Address and control inputs changing once
per clock cycle; ^tCK = ^tCK (MIN); DQ, DM, and DQS inputs changing
twice per clock cycle
Auto refresh current
t_{REFC =} t_{RFC (MIN)}
t_{REFC = 15.625µs}
Self refresh current: CKE  0.2V
Operating bank interleave read current: Four device bank
interleaving reads (BL = 4) with auto precharge; ^tRC = ^tRC (MIN);
t_{CK =} t_{CK (MIN); Address and control inputs change only during}
active READ or WRITE commands
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD5A
I_DD6
I_DD7
-40B
900
1080
36
450
315
540
1620
1620
1440
54
36
2610
-335
810
Units
mA
1035
mA
36
mA
450
mA
270
mA
495
mA
1440
mA
1440
mA
1440
mA
54
36
mA
2430
mA
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. F 3/12 EN
12
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