MT40A1G8WE-075E Datasheet, PDF (296/358 Pages) Micron Technology – Refresh time of 8192-cycle at TC temperature range

8Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – On-Die Termination Characteristics
Table 128: ODT Voltage and Temperature Sensitivity
Parameter
dR_TTdT
dR_TTdV
Min
0
0
Max
1.5
0.15
Unit
%/°C
%/mV
ODT Timing Definitions
The reference load for ODT timings is different than the reference load used for timing
measurements.
Figure 233: ODT Timing Reference Load
CK_t, CK_c
VDDQ
DUT
DQ, DQS_t, DQS_c,
DM, TDQS_t, TDQS_c
R_TT = 50ȍ
VSSQ
Timing reference point
V_TT = V_SSQ
ODT Timing Definitions and Waveforms
Definitions for ^tADC, ^tAONAS, and ^tAOFAS are provided in the Table 129 (page 296) and
shown in Figure 234 (page 297) and Figure 236 (page 298). Measurement reference set-
tings are provided in the subsequent Table 130 (page 297).
The ^tADC for the dynamic ODT case and read disable ODT cases are represented by
t_{ADC of Direct ODT Control case.}
Table 129: ODT Timing Definitions
Parameter
Begin Point Definition
t_ADC
Rising edge of CK_t, CK_c defined by the end point of
DODTLoff
Rising edge of CK_t, CK_c defined by the end point of
DODTLon
Rising edge of CK_t, CK_c defined by the end point of
ODTLcnw
Rising edge of CK_t, CK_c defined by the end point of
ODTLcwn4 or ODTLcwn8
t_AONAS
Rising edge of CK_t, CK_c with ODT being first registered
HIGH
t_AOFAS
Rising edge of CK_t, CK_c with ODT being first registered
LOW
End Point Definition
Extrapolated point at V_RTT,nom
Extrapolated point at V_SSQ
Extrapolated point at V_RTT,nom
Extrapolated point at V_SSQ
Extrapolated point at V_SSQ
Extrapolated point at V_RTT,nom
Figure
Figure 234
(page 297)
Figure 234
(page 297)
Figure 235
(page 298)
Figure 235
(page 298)
Figure 236
(page 298)
Figure 236
(page 298)
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN
296
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