MT40A1G8WE-075E Datasheet, PDF (184/358 Pages) Micron Technology – Refresh time of 8192-cycle at TC temperature range

8Gb: x8, x16 Automotive DDR4 SDRAM
READ Operation
READ Operation
Read Timing Definitions
The read timings shown below are applicable in normal operation mode, that is, when
the DLL is enabled and locked.
Note: ^tDQSQ = both rising/falling edges of DQS; no ^tAC defined.
Rising data strobe edge parameters:
• ^tDQSCK (MIN)/(MAX) describes the allowed range for a rising data strobe edge rela-
tive to CK.
• ^tDQSCK is the actual position of a rising strobe edge relative to CK.
• ^tQSH describes the DQS differential output HIGH time.
• ^tDQSQ describes the latest valid transition of the associated DQ pins.
• ^tQH describes the earliest invalid transition of the associated DQ pins.
Falling data strobe edge parameters:
• ^tQSL describes the DQS differential output LOW time.
• ^tDQSQ describes the latest valid transition of the associated DQ pins.
• ^tQH describes the earliest invalid transition of the associated DQ pins.
CCMTD-1406124318-10419
8gb_auto_ddr4_dram.pdf - Rev. C 3/17 EN
184
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.