MT47H32M16CC3B Datasheet, PDF (11/133 Pages) Micron Technology – 512Mb: x4, x8, x16 DDR2 SDRAM

512Mb: x4, x8, x16 DDR2 SDRAM
Functional Description
Automotive Temperature
The automotive temperature (AT) option, if offered, has two simultaneous require-
ments: ambient temperature surrounding the device cannot be less than –40°C or great-
er than 105°C, and the case temperature cannot be less than –40°C or greater than
105°C. JEDEC specifications require the refresh rate to double when T_C exceeds 85°C;
this also requires use of the high-temperature self refresh option. Additionally, ODT re-
sistance the input/output impedance and I_DD values must be derated when T_C is < 0°C
or > 85°C.
General Notes
• The functionality and the timing specifications discussed in this data sheet are for the
DLL-enabled mode of operation.
• Throughout the data sheet, the various figures and text refer to DQs as “DQ.” The DQ
term is to be interpreted as any and all DQ collectively, unless specifically stated oth-
erwise. Additionally, the x16 is divided into 2 bytes: the lower byte and the upper byte.
For the lower byte (DQ[7:0]), DM refers to LDM and DQS refers to LDQS. For the up-
per byte (DQ[15:8]), DM refers to UDM and DQS refers to UDQS.
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
used, use the lower byte for data transfers and terminate the upper byte as noted:
– Connect UDQS to ground via 1kΩ* resistor
– Connect UDQS# to V_DD via 1kΩ* resistor
– Connect UDM to V_DD via 1kΩ* resistor
– Connect DQ[15:8] individually to either V_SS or V_DD via 1kΩ* resistors, or float
DQ[15:8].
*If ODT is used, 1kΩ resistor should be changed to 4x that of the selected ODT.
• Complete functionality is described throughout the document, and any page or dia-
gram may have been simplified to convey a topic and may not be inclusive of all re-
quirements.
• Any specific requirement takes precedence over a general statement.
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
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