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MT49H8M36 Datasheet, PDF (1/49 Pages) Micron Technology – 288Mb CIO Reduced Latency | |||
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288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II
Features
288Mb CIO Reduced Latency (RLDRAM® II)
MT49H8M36
MT49H16M18
MT49H32M9
For the latest data sheet, refer to Micronâs Web site: www.micron.com/rldram
Features
⢠400 MHz DDR operation (800 Mb/s/pin data rate)
⢠Organization
8 Meg x 36, 16 Meg x 18, and 32 Meg x 9
8 banks
⢠Cyclic bank switching for maximum bandwidth
⢠Reduced cycle time (20ns at 400 MHz)
⢠Nonmultiplexed addresses (address multiplexing
option available)
⢠SRAM-type interface
⢠Programmable READ latency (RL), row cycle time,
and burst sequence length
⢠Balanced READ and WRITE latencies in order to
optimize data bus utilization
⢠Data mask for WRITE commands
⢠Differential input clocks (CK, CK#)
⢠Differential input data clocks (DKx, DKx#)
⢠On-chip DLL generates CK edge-aligned data and
output data clock signals
⢠Data valid signal (QVLD)
⢠32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms)
⢠144-ball µBGA package
⢠HSTL I/O (1.5V or 1.8V nominal)
⢠25Ωâ60Ω matched impedance outputs
⢠2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
⢠On-die termination (ODT) RTT
Table 1: Valid Part Numbers
Part Number
MT49H8M36FM-xx
MT49H16M18FM-xx
MT49H32M9FM-xx
Description
8 Meg x 36 RLDRAM II
16 Meg x 18 RLDRAM II
32 Meg x 9 RLDRAM II
Figure 1: 144-Ball µBGA
Options
⢠Clock cycle timing
2.5ns (400 MHz)
3.3ns (300 MHz)
5ns (200 MHz)
⢠Configuration
8 Meg x 36
16 Meg x 18
32 Meg x 9
⢠Operating temperature range
Commercial
0° to +95°C
Industrial
TC = -40°C to +95°C
TA = -40°C to 85°C)
⢠Package
144-ball µBGA
(11mm x 18.5mm, lead-free)
Marking
-25
-33
-5
MT49H8M36
MT49H16M18
MT49H32M9
None
IT
FM
BM1
Notes: 1. Contact Micron for availability of lead-free
products.
PDF: 09005aef80a41b46/Source: 09005aef809f284b
MT49H8M36_1.fm - Rev. H 8/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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