MRF49XAT-I-ST Datasheet, PDF (79/102 Pages) Microchip Technology – ISM Band Sub-GHz RF Transceiver

MRF49XA
5.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings^(†)
Temperature under bias ........................................................................................................................... -40°C to +85°C
Storage temperature .............................................................................................................................. -55°C to +125°C
Lead temperature (soldering, max 10s) ............................................................................................................... +260°C
Voltage on VDD with respect to VSS ............................................................................................................... -0.3V to 6V
Voltage on any combined digital and analog pin with respect to VSS
(except RFP, RFN and VDD) ........................................................................................................... -0.3V to (VDD + 0.3V)
Voltage on open-collector outputs (RFP, RFN)⁽¹⁾........................................................................... -0.5V to (VDD + 1.5V)
Input current into pin (except VDD and VSS).......................................................................................... -25 mA to 25 mA
Electrostatic discharge with human body model .................................................................................................... 1000V
Note: At maximum, voltage on RFP and RFN cannot be higher than 7V.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
© 2009-2011 Microchip Technology Inc.
Preliminary
DS70590C-page 79