TC1302A_13 Datasheet, PDF (4/26 Pages) Microchip Technology – Low Quiescent Current Dual Output LDO

TC1302A/B
DC CHARACTERISTICS (Continued)
Electrical Specifications: Unless otherwise noted, V_IN = V_R +1V, I_OUT1 = I_OUT2 = 100 µA, C_IN = 4.7 µF,
C_OUT1 = C_OUT2 = 1 µF, C_BYPASS = 10 nF, SHDN > V_IH, T_A = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ Max Units
Conditions
Shutdown Supply Current
TC1302A
I_{IN_SHDNA}
—
58
90
µA SHDN2 = GND
Shutdown Supply Current
TC1302B
I_{IN_SHDNB}
—
0.1
1
µA SHDN1 = SHDN2 = GND
Power Supply Rejection Ratio
Output Noise
PSRR
eN
—
58
—
dB f  100 Hz, I_OUT1 = I_OUT2 = 50 mA,
C_IN = 0 µF
—
830
— nV/(Hz)^½ f  1 kHz, I_OUT1 = I_OUT2 = 50 mA,
C_IN = 0 µF
Output Short Circuit Current (Average)
V_OUT1
I_OUTsc1
—
200
—
mA R_LOAD1  1
V_OUT2
I_OUTsc2
—
140
—
mA R_LOAD2  1
SHDN Input High Threshold
V_IH
45
—
—
%V_IN V_IN = 2.7V to 6.0V
SHDN Input Low Threshold
V_IL
—
—
15
%V_IN V_IN = 2.7V to 6.0V
Wake Up Time (From SHDN
mode), (V_OUT2)
t_WK
—
5.3
20
µs
V_IN = 5V, I_OUT1 = I_OUT2 = 30 mA,
See Figure 5-1
Settling Time (From SHDN mode),
t_S
(V_OUT2)
—
50
—
µs
V_IN = 5V, I_OUT1 = I_OUT2 = 50 mA,
See Figure 5-2
Thermal Shutdown Die
Temperature
T_SD
—
150
—
°C
V_IN = 5V, I_OUT1 = I_OUT2 = 100 µA
Thermal Shutdown Hysteresis
T_HYS
—
10
—
°C
V_IN = 5V
Note 1:
2:
3:
4:
The minimum V_IN has to meet two conditions: V_IN  2.7V and V_IN  V_R + V_DROPOUT.
V_R is defined as the higher of the two regulator nominal output voltages (V_OUT1 or V_OUT2).
TCV_OUT = ((V_OUTmax - V_OUTmin) * 10⁶)/(V_OUT * T).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for t = 10 msec.
6: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
value measured at a 1V differential.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T_A, T_J, _JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: V_IN = +2.7V to +6.0V.
Parameters
Sym
Min
Typ
Max Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
T_A
-40
—
+125 °C Steady State
Storage Temperature Range
T_A
-65
—
+150 °C
Maximum Junction Temperature
T_J
—
—
+150 °C Transient
Thermal Package Resistances
Thermal Resistance, MSOP8
Thermal Resistance, DFN8
_JA
—
208
—
°C/W Typical 4-Layer Board
_JA
—
41
—
°C/W Typical 4-Layer Board with Vias
DS21333C-page 4
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