PIC16F882 Datasheet, PDF (241/288 Pages) Microchip Technology – 28/40/44-Pin, Enhanced Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC16F882/883/884/886/887
17.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings^(†)
Ambient temperature under bias..........................................................................................................-40° to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on VDD with respect to VSS ................................................................................................... -0.3V to +6.5V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)
Total power dissipation⁽¹⁾ ............................................................................................................................... 800 mW
Maximum current out of VSS pin .................................................................................................................... 300 mA
Maximum current into VDD pin ....................................................................................................................... 250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)...............................................................................................................± 20 mA
Output clamp current, IOK (Vo < 0 or Vo >VDD).........................................................................................................± 20 mA
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA, PORTB and PORTE (combined)⁽²⁾........................................................ 200 mA
Maximum current sourced by PORTA, PORTB and PORTE (combined)⁽²⁾ .................................................. 200 mA
Maximum current sunk by PORTC and PORTD (combined)⁽²⁾ ..................................................................... 200 mA
Maximum current sourced by PORTC and PORTD (combined)⁽²⁾ ................................................................ 200 mA
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOl x IOL).
2: PORTD and PORTE are implemented on PIC16F886/PIC16F887 only.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for
extended periods may affect device reliability.
© 2007 Microchip Technology Inc.
Preliminary
DS41291D-page 239