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| MDS9652E Datasheet, PDF (7/9 Pages) MagnaChip Semiconductor. – Complementary N-P Channel Trench MOSFET | |||
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10
* Note : ID = -6.1A
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
-Qg [nC]
Fig.18 Gate Charge Characteristics
102
101
100 Operation in This Area
is Limited by R DS(on)
1 ms
10 ms
100 ms
1s
DC
10-1
Single Pulse
Rθ j=a 62.5â /W
Ta=25â
10-2
10-1
100
101
102
-V [V]
DS
Fig.20 Maximum Safe Operating Area
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
C = C + C (C = shorted)
iss
gs
gd ds
Coss = Cds + Cgd
C =C
rss
gd
C
iss
C
rss
C
oss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
5
10
15
20
25
30
-V [V]
DS
Fig.19 Capacitance Characteristics
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T
a
[â
]
Fig.21 Maximum Drain Current vs.
Ambient Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JA=62.5â /W
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [s]
1
Fig.22 Transient Thermal Response Curve
April. 2010. Version 2.0
7
MagnaChip Semiconductor Ltd.
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