MDS9652E Datasheet, PDF (2/9 Pages) MagnaChip Semiconductor. – Complementary N-P Channel Trench MOSFET

Ordering Information
Part Number
MDS9652EURH
Temp. Range
-55~150^oC
Package
SOIC-8L
Packing
Tape & Reel
RoHS Status
Halogen Free
N-channel Electrical Characteristics (T_a =25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Note :
1. Surface mounted FR-4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 15V, VGS = 10V
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 10V, ID = 7.2A
VGS = 4.5V, ID = 5.0A
VDS = 5V, ID = 7.2A
VDS = 15V, ID = 7.2A,
VGS = 10V
VDS = 15V, VGS = 0V,
f = 1.0MHz
VGS = 10V ,VDS = 15V,
RL = 2.2Ω, RGEN = 6Ω
IS = 1A, VGS = 0V
IF = 7.2A, di/dt = 100A/μs
Min Typ
Max Unit
30
-
1.0
1.9
-
-
-
-
15
-
19
-
20
-
V
3.0
1.0
μA
10
23
mΩ
30
-
S
-
12.8
-
-
1.9
-
nC
-
2.7
-
-
635
-
-
82
-
pF
-
158
-
-
4.2
-
-
23.0
-
ns
-
37.0
-
-
22.0
-
-
0.75
1.0
V
-
17
-
ns
-
8
-
nC
April. 2010. Version 2.0
2
MagnaChip Semiconductor Ltd.