MDS9652E Datasheet, PDF (4/9 Pages) MagnaChip Semiconductor. – Complementary N-P Channel Trench MOSFET

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
5.0V
35
10V
4.5V _4.0V
30
3.5V
25
20
15
VGS=3.0V
10
5
0
0
1
2
3
4
5
V_DS [V]
Fig.1 On-Region Characteristics
50
40
30
V_GS=4.5V
20
V_GS=10V
10
0
5
10
15
20
25
30
35
40
I_D [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
V_GS=10V
V =4.5V
I_D=7.2A
GS
I_D=5.0A
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
70
60
50
40
30
125℃
20
25℃
10
0
2
4
6
8
10
V_GS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
*Note ; VDS=5.0V
15
10
5
25℃
125℃
0
0
1
2
3
4
5
V_GS [V]
Fig.5 Transfer Characteristics
April. 2010. Version 2.0
4
10
1
0.1
0.01
1E-3
1E-4
125℃
1E-5
25℃
1E-6
0.0
0.2
0.4
0.6
0.8
1.0
-V [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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