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| MDS9652E Datasheet, PDF (5/9 Pages) MagnaChip Semiconductor. – Complementary N-P Channel Trench MOSFET | |||
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10
* Note ; ID = 7.2A
8
6
4
2
0
0
2
4
6
8
10
12
14
Qg [nC]
Fig.7 Gate Charge Characteristics
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0
Ciss
Coss
Crss
5
10
15
V [V]
DS
C = C + C (C = shorted)
iss
gs
gd ds
Coss = Cds + Cgd
C =C
rss
gd
* Notes ;
1. V = 0 V
GS
2. f = 1 MHz
20
25
30
Fig.8 Capacitance Characteristics
102
101
Operation in This Area
100
is Limited by R DS(on)
1 ms
10 ms
100 ms
1s
DC
10-1
Single Pulse
Rθ ja=62.5â /W
Ta=25â
10-2
10-1
100
101
102
V [V]
DS
Fig.9 Maximum Safe Operating
Area
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T
a
[â
]
Fig.10 Maximum Drain Current
Vs. Ambient Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
â» Notes :
Duty Factor, D=t /t
12
PEAK TJ = PDM * Zθ Ja* Rθ J(at) + Ta
RÎ JA=62.5â /W
single pulse
10-3
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
April. 2010. Version 2.0
5
MagnaChip Semiconductor Ltd.
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