MDS9652E Datasheet, PDF (1/9 Pages) MagnaChip Semiconductor. – Complementary N-P Channel Trench MOSFET

MDS9652E
Complementary N-P Channel Trench MOSFET
General Description
The MDS9652E uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
N-Channel
 VDS = 30V
 ID = 7.2A @ VGS = 10V

RDS(ON)
<23m @ VGS = 10V
<30m @ VGS = 4.5V
P-Channel
VDS = -30V
ID = -6.1A @ VGS = -10V
RDS(ON)
<38m @ VGS = -10V
<52m @ VGS = -4.5V
Applications
 Inverters
 General purpose applications
5(D2)
6(D2)
7(D1)
8(D1)
D1
D2
4(G2)
G1
G2
3(S2)
2(G1)
1(S1)
S1
S2
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation⁽¹⁾
Single Pulse Avalanche Energy⁽²⁾
Junction and Storage Temperature Range
Ta=25^oC
Ta=100^oC
Ta=25^oC
Ta=100^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
N-Ch
P-Ch
30
-30
V
±20
±20
V
7.2
-6.1
A
4.6
-3.8
A
30
-30
A
2
2
W
0.8
0.8
32
72
mJ
-55~150
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)⁽¹⁾
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient(Steady-State)⁽¹⁾
Thermal Resistance, Junction-to-Case
Device
N-Ch
N-Ch
P-Ch
P-Ch
Symbol
RθJA
RθJC
RθJA
RθJC
Rating
62.5
50
62.5
50
Unit
o_C/W
April. 2010. Version 2.0
1
MagnaChip Semiconductor Ltd.