MDS9652E Datasheet, PDF (6/9 Pages) MagnaChip Semiconductor. – Complementary N-P Channel Trench MOSFET

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10.0V -5.0V _-4.5V
-4.0V
15
10
-3.5V
5
V_GS=-3.0V
0
0
1
2
3
4
5
-V_DS [V]
Fig.12 On-Region Characteristics
70
60
50
40
V_GS=-4.5V
30
V =-10V
GS
20
10
0
0
5
10
15
20
25
30
-I_D [A]
Fig.13 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
1.6
1.4
V_GS=-10V
I =-6.1A
D
V =-4.5V
GS
I_D=-5.0A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [℃ ]
Fig.14 On-Resistance Variation with
Temperature
100
*Note ; I_D=-6.1A
90
80
70
60
50
125℃
40
30
20
25℃
10
0
2
3
4
5
6
7
8
9
10
-V [V]
GS
Fig.15 On-Resistance Variation with
Gate to Source Voltage
20
* Note ; V_DS=-5V
15
10
5
125℃
25℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V [V]
GS
Fig.16 Transfer Characteristics
April. 2010. Version 2.0
6
10
1
0.1
0.01
1E-3
125℃
25℃
1E-4
0.0
0.2
0.4
0.6
0.8
1.0
-V [V]
SD
Fig.17 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.