7025E Datasheet, PDF (5/20 Pages) Maxwell Technologies – (8K x 16-Bit) Dual Port RAM High-Speed CMOS

(8K x 16-Bit) Dual Port RAM High-Speed CMOS
7025E
PARAMETER
TABLE 8. 7025E AC ELECTRICAL CHARACTERISTICS FOR WRITE CYCLE
(V_CC = 5V ± 10%, V_SS = 0V, T_A = -55 TO 125 ^°C)
SYMBOL SUBGROUPS
MIN
MAX
UNIT
Chip Select to End of Write ¹
-35
-45
t_SW 9, 10, 11
ns
30
--
40
--
Address Setup Time
-35
-45
t_AS
9, 10, 11
0
0
ns
--
--
Write Pulse Width
-35
-45
t_WP 9, 10, 11
ns
30
--
35
--
Write Recovery Time
-35
-45
t_WR 9, 10, 11
0
0
ns
--
--
Data Valid to End of Write
-35
-45
t_DW 9, 10, 11
ns
25
--
25
--
Output High Z Time ^2,3
-35
-45
t_HZ
9, 10, 11
ns
--
20
--
20
Data Hold Time
-35
-45
Write Select to Output in High Z ^2,3
-35
-45
Output Active from End of Write ^2,3,4
-35
-45
t_DH
9, 10, 11
0
0
ns
--
--
t_WZ 9, 10, 11
ns
--
20
--
20
t_OW 9, 10, 11
0
0
ns
--
--
SEM Flag Write to Read Time
-35
-45
t_SWRD
ns
10
--
10
--
SEM Flag Contention Window
-35
-45
t_SPS
ns
10
--
10
--
1. To access RAM, CS = V_IL, UB or LB = V_IL, SEM = V_IH. To access semaphore, CS = V_IN and SEM = V_IL. Either condition must be
valid for the entire t_EW time.
2. Guaranteed by design.
3. Transition is measured ± 500 mV from low or high impedance voltage with load.
4. The specification for t_DH must be met by the device supplying write data to the RAM under all operating conditions. Although t_DH
and t_DW.
08.15.02 Rev 2
All data sheets are subject to change without notice 5
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