7025E Datasheet, PDF (4/20 Pages) Maxwell Technologies – (8K x 16-Bit) Dual Port RAM High-Speed CMOS

(8K x 16-Bit) Dual Port RAM High-Speed CMOS
7025E
PARAMETER
TABLE 7. 7025E AC ELECTRICAL CHARACTERISTICS FOR READ CYCLE
(V_CC = 5V ± 10%, V_SS = 0V, T_A = -55 TO 125 ^°C)
SYMBOL SUBGROUPS
MIN
MAX
UNIT
Read Cycle Time
-35
-45
t_RC
9, 10, 11
ns
35
--
45
--
Address Access Time
-35
-45
Chip Select Access Time ¹
-35
-45
Byte Select Access Time ¹
-35
-45
Output Select to Output Valid
-35
-45
Output Low Z Time ^2,3
-35
-45
Output High Z Time ^2,3
-35
-45
Chip Enable to Power Up Time ²
Chip Disable to Power Up Time ²
Semaphore Flag Update Pulse (OE or SEM)
t_AA
9, 10, 11
ns
--
35
--
45
t_ACS
9, 10, 11
ns
--
35
--
45
t_ABE
9, 10, 11
ns
--
35
--
45
t_AOE
9, 10, 11
ns
--
20
--
25
t_LZ
9, 10, 11
3
3
ns
--
--
t_HZ
9, 10, 11
--
20
ns
--
20
t_PU
9, 10, 11
0
--
ns
t_PD
9, 10, 11
--
50
ns
t_SOP
9, 10, 11
15
--
ns
1. To access RAM, CS = V_IL, UB or LB = V_IL, SEM = V_IH. To access semaphore, CS = V_IN and SEM = V_IL. Either condition must be
valid for the entire t_EW time.
2. Guaranteed by design.
3. Transition is measured ± 500 mV from low or high impedance voltage with load.
PARAMETER
TABLE 8. 7025E AC ELECTRICAL CHARACTERISTICS FOR WRITE CYCLE
(V_CC = 5V ± 10%, V_SS = 0V, T_A = -55 TO 125 ^°C)
SYMBOL SUBGROUPS
MIN
MAX
UNIT
Write Cycle Time
-35
-45
t_WC 9, 10, 11
ns
35
--
45
--
Address Valid to End of Write
-35
-45
t_AW 9, 10, 11
ns
30
--
40
--
08.15.02 Rev 2
All data sheets are subject to change without notice 4
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