NPA1008 Datasheet, PDF (9/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical 2-Tone Performance as measured in the Broadband Evaluation Board
1 MHz Tone Spacing, Freq = 1900 MHz, V_DS = 28 V, I_DQ = 88 mA, T_C = 25°C (unless noted)
2-Tone IMD vs. Output Power vs. I_DQ
-15
48mA
-20
68mA
88mA
-25
108mA
-30
128mA
-35
-40
-45
-50
0.01
0.1
1
P_OUT (W-PEP)
2-Tone Gain vs. Output Power vs. I_DQ
17
16
15
14
13
12
48mA
68mA
88mA
11
108mA
128mA
10
10
0.01
0.1
1
10
P_OUT (W-PEP)
2-Tone IMD vs. Output Power
2-Tone IMD vs. Tone Spacing (P_OUT = 37 dBm-PEP)
-10
-IMD3
+IMD3
-20
-IMD5
+IMD5
-30
-IMD7
+IMD7
-40
-10
-15
-IMD3
+IMD3
-IMD5
-20
+IMD5
-IMD7
-25
+IMD7
-30
-35
-50
-60
0.01
-40
-45
0.1
1
1100
P_OUT (W-PEP)
-50
0.1
Quiescent V_GS vs. Temperature
-0.70
1
10
100
Tone Spacing (MHz)
-0.80
-0.90
-1.0
-1.1
-1.2
48mA
-1.3
88mA
-1.4
148mA
-1.5
-50
-25
0
25
50
75
100
Temperature (^oC)
9
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