NPA1008 Datasheet, PDF (3/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Absolute Maximum Ratings^3,4,5
Parameter
Drain Source Voltage, V_DS
Gate Source Voltage, V_GS
Gate Current, I_G
Junction Temperature, T_J
Absolute Maximum
100 V
-10 to 3 V
12 mA
+200°C
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
ESD Min. - Human Body Model (HBM)
+350 V
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with T_J ≤ 200°C will ensure MTTF > 1 x 10⁶ hours.
Rev. V3
Thermal Characteristics^6,7
Parameter
Test Conditions
Symbol Typical Units
Thermal Resistance
V_DS = 28 V, T_J =200°C
Ó¨_JC
12.1 °C/W
6. Junction temperature (T_J) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
7. The thermal resistance of the mounting configuration must be added to the device Ó¨_JC , for proper T_J calcula-
tion during operation. The recommended via pattern, shown on page 4, on a 20 mil thick, 1 oz plated copper,
PCB adds an additional 4 °C/W to the typical value.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
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