NPA1008 Datasheet, PDF (7/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, V_DS = 28 V, I_DQ = 88 mA, T_C = 25°C (unless noted)
Gain vs. Frequency
17
P_OUT = 24dBm
16
P_OUT = 36dBm
15
P_OUT = 37dBm
14
13
12
11
10
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Gain vs. Frequency at P_OUT = 37 dBm
16
15
-40°C
+25°C
14
+85°C
13
12
11
10
9
8
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Input Return Loss vs. Frequency
-6
-8
-10
-12
Input Return Loss at P_OUT = 37 dBm vs. Frequency
-6
-40°C
-8
+25°C
+85°C
-10
-14
-16
P_OUT = 24dBm
P_OUT = 36dBm
-18
P_OUT = 37dBm
-20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
-12
-14
-16
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Power Added Efficiency vs. Frequency
60
50
40
Power Added Efficiency at P_OUT = 37 dBm vs. Frequency
60
-40°C
55
+25°C
50
+85°C
30
45
P_OUT = 24dBm
P_OUT = 36dBm
20
P_OUT = 37dBm
40
10
35
0
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
7
30
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
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