NPA1008 Datasheet, PDF (6/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Typical Performance as measured in the Broadband Evaluation Board:
CW, V_DS = 28 V, I_DQ = 88 mA, T_C = 25°C (unless noted)
Rev. V3
Device s-parameters (Deembedded)
Broadband Circuit s-Parameters
20
0
20
0
15
-5
10
-10
5
S₂₁
-15
S₁₁
S₂₂
0
-20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
15
-5
10
-10
5
S₂₁
-15
S₁₁
S₂₂
0
-20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Performance vs. Frequency at P_OUT = 37 dBm
15
70
Gain
14
PAE
60
13
50
12
40
11
30
10
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Performance vs. Input Return Loss at P_OUT = 37 dBm
25
0
Gain
20
IRL
-5
15
-10
10
-15
5
-20
0
-25
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
6
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