NPA1008 Datasheet, PDF (2/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
RF Electrical Specifications: T_C = 25 °C , V_DS = 28 V, I_DQ = 88 mA
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
Small Signal Gain
CW, 1900 MHz
G_SS
-
15.6
-
dB
Gain
CW, P_OUT = 37 dBm, 1900 MHz
G_P
10.5
12.0
-
dB
Saturated Output Power
CW, 1900 MHz
P_SAT
-
38.9
-
dBm
Drain Efficiency
CW, 1900 MHz
η_SAT
44
47.0
-
%
Power Added Efficiency
CW, P_OUT = 37 dBm, 1900 MHz
PAE
-
44.7
-
%
Ruggedness
All phase angles

VSWR = 15:1, No Device Damage
DC Electrical Specifications: T_C = 25°C
Parameter
Test Conditions
Symbol
Drain-Source Leakage Current
V_GS = -8 V, V_DS = 100 V
I_DLK
Gate-Source Leakage Current
V_GS = -8 V, V_DS = 0 V
I_GLK
Gate Threshold Voltage
V_DS = 28 V, I_D = 4 mA
V_T
Gate Quiescent Voltage
V_DS = 28 V, I_D = 88 mA
V_GSQ
On Resistance
V_DS = 2 V, I_D = 45 mA
R_ON
Saturated Drain Current
V_DS = 7 V pulsed, pulse width 300 µs I_D(SAT)
Min.
-
-
-2.5
-2.1
-
-
Typ.
4
2
-1.5
-1.2
1.2
2.3
Max.
-
-
-0.5
-0.3
-
-
Units
mA
mA
V
V
Ω
A
2
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