NPA1008 Datasheet, PDF (4/11 Pages) M/A-COM Technology Solutions, Inc. – GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
V_GS
RF
In
L1
0.9 mH
C3
10 mF
C1
2400 pF
R1
470 W
L3
2.2 nH
NPA1008
L2
0.9 mH
C9
1000 pF
C4
4.7 mF
V_DS
L4
1.5 nH
C5
0.6 pF
C6
0.8 pF
C2
2400 pF
C7
0.5 pF
C8
0.6 pF
RF
Out
Rev. V3
Description
Parts measured on evaluation board (20-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Bias Sequencing
Turning the device ON
1. Set V_GS to the pinch-off (V_P), typically -5 V.
2. Turn on V_DS to nominal voltage (28 V).
3. Increase V_GS until the I_DS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V_GS down to V_P.
3. Decrease V_DS down to 0 V.
4. Turn off V_GS.
Recommended Via Pattern (All dimensions shown as inches)
4
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