GM71C4403C Datasheet, PDF (7/10 Pages) LG Semicon Co.,Ltd. – 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

LG Semicon
GM71C4403C
Extended Data Out (EDO) Mode Cycle
Symbol
Parameter
tHPC
tCP
tRASP
tACP
tRHCP
tCPW
tHPRWC
tCOL
tCOP
tRCHP
tDOH
EDO Mode Cycle Time
EDO Mode CAS Precharge Time
EDO Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
EDO Read-Modify-Write Cycle CAS
Precharge to WE Delay Time
EDO Read-Modify-Write Cycle Time
CAS Hold Time Referred OE
CAS to OE setup Time
Read Command Hold Time from
CAS Precharge
Output data hold time from CAS low
GM71C4403
C-60
Min Max
GM71C4403
C-70
Min Max
GM71C4403
C-80
Min Max
Unit
Note
25 - 30 - 35 - ns ²³
10 - 13 - 15 - ns
- 100,000 - 100,000 - 100,000 ns
12
- 35 - 40 - 45 ns 3,13,17
35 - 40 - 45 - ns
52 - 60 - 67 - ns 10
66 - 77 - 86 - ns
10 - 13 - 20 - ns
5 - 5 - 5 - ns
35 - 40 - 45 - ns
3 - 3 - 3 - ns
Test Mode Cycle
Symbol
Parameter
tWS
Test Mode WE Setup Time
tWH
Test Mode WE Hold Time
GM71C4403 GM71C4403 GM71C4403
C-60
C-70
C-80
Unit
Min Max Min Max Min Max
Note
0 - 0 - 0 - ns
10 - 10 - 10 - ns
Counter Test Cycle
Symbol
Parameter
tCPT
CAS Precharge Time in Counter Test
Cycle
GM71C4403 GM71C4403 GM71C4403
C-60
C-70
C-80
Unit
Min Max Min Max Min Max
Note
40 - 40 - 40 - ns
7