GM71C4403C Datasheet, PDF (6/10 Pages) LG Semicon Co.,Ltd. – 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

LG Semicon
Write Cycle
Symbol
Parameter
tWCS
Write Command Setup Time
tWCH Write Command Hold Time
tWP
Write Command Pulse Width
tRWL
Write Command to RAS Lead Time
tCWL
Write Command to CAS Lead Time
tDS
Data-in Setup Time
tDH
Data-in Hold Time
GM71C4403C
GM71C4403 GM71C4403 GM71C4403
C-60
C-70
C-80
Unit
Min Max Min Max Min Max
Note
0-
0-
0 - ns
10
10 - 13 - 15 - ns
10 - 10 - 10 - ns
10 - 13 - 15 - ns
10 - 13 - 15 - ns
0 - 0 - 0 - ns
11
10 - 13 - 15 - ns
11
Read- Modify-Write Cycle
Symbol
Parameter
tRWC
tRWD
tCWD
tAWD
tOEH
Read-Modify-Write Cycle Time
RAS to WE Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
OE Hold Time from WE
GM71C4403 GM71C4403 GM71C4403
C-60
C-70
C-80
Unit
Min Max Min Max Min Max
Note
133 - 159 - 183 - ns
77 - 90 - 102 - ns 10
32 - 38 - 42 - ns 10
47 - 55 - 62 - ns 10
15 - 18 - 20 - ns
Refresh Cycle
Symbol
Parameter
tCSR
CAS Set-up Time
(CAS-before-RAS Refresh Cycle)
tCHR
CAS Hold Time
(CAS-before-RAS Refresh Cycle)
tRPC
RAS Precharge to CAS Hold Time
tCPN
CAS Precharge Time in Normal Mode
GM71C4403
C-60
Min Max
GM71C4403
C-70
Min Max
GM71C4403
C-80
Min Max
Unit
Note
10 - 10 - 10 - ns
10 - 10 - 10 - ns
10 - 10 - 10 - ns
10 - 13 - 15 - ns
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