2032VE Datasheet, PDF (3/14 Pages) Lattice Semiconductor – 3.3V In-System Programmable High Density SuperFAST™ PLD

Specifications ispLSI 2032VE
Absolute Maximum Ratings ¹
Supply Voltage V_cc .................................. -0.5 to +5.4V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature .............................. -65 to +150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T_J) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
SYMBOL
VCC
VIL
VIH
Supply Voltage
Input Low Voltage
Input High Voltage
PARAMETER
Commercial _{TA = 0°C to + 70°C}
Industrial
T_A = -40°C to + 85°C
MIN.
3.0
3.0
V_SS – 0.5
2.0
MAX. UNITS
3.6
V
3.6
V
0.8
V
5.25
V
Table 2-0005/2032VE
Capacitance (T_A=25°C, f=1.0 MHz)
SYMBOL
C₁
C₂
C₃
PARAMETER
Dedicated Input Capacitance
I/O Capacitance
Clock Capacitance
TYPICAL
8
6
10
UNITS
pf
pf
pf
TEST CONDITIONS
V_CC = 3.3V, V_IN = 0.0V
V_CC = 3.3V, V_I/O = 0.0V
V_CC = 3.3V, V_Y = 0.0V
Table 2-0006/2032VE
Erase Reprogram Specifications
PARAMETER
Erase/Reprogram Cycles
MINIMUM
10,000
MAXIMUM
–
UNITS
Cycles
Table 2-0008A/2032VE
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