IRF830S Datasheet, PDF (6/6 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

SMD Type
■ Typical Characterisitics
N-Channel MOSFET
IRF830S (KRF830S)
D.U.T.
+
-
Peak Dio de Recovery dV/dt Test Circuit
+
Circuit layout con siderations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
MOSFET
R_g
• dV/dt controlled by R _g
+
• Driver same type as D.U.T.
• I_SD controlled by duty factor “D”
- ^{V DD}
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
V_GS = 10 V^a
D.U.T. l_SD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V_DS waveform
Diode recovery
dV/dt
V _DD
Re-applied
voltage
Inductor current ^{Body diode forward drop}
Ripple ≤ 5 %
I_{S D}
Note
a. V_GS = 5 V for logic level devices
Fig. 14 - For N-Channel
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