IRF830S Datasheet, PDF (1/6 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

SMD Type
N-Channel MOSFET
IRF830S (KRF830S)
MOSFET
■ Features
● VDS (V) = 500V
● ID = 4.5 A (VGS = 10V)
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● Fast Switching
● Repetitive Avalanche Rated
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Tc=25℃
Tc=100℃
Power Dissipation
Tc=25℃
Ta=25℃
Single Pulse Avalanche Energy (Note1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Ambient (PCB Mount)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJC
TJ
Tstg
Note.1: L = 24mH, IAS = 4.5A, VDD = 50V, RG = 25 Ω , Starting TJ = 25°C.
Note.2: ISD = 4.5A, di/dt = 75 A/μs, VDD = V(BR)DSS, Starting TJ = 25°C.
Rating
500
±20
4.5
2.9
18
4.5
74
3.1
280
7.4
3.5
62
40
1.7
150
-55 to 150
Unit
V
A
W
mJ
V/ns
℃/W
℃
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