IRF830S Datasheet, PDF (3/6 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

SMD Type
N-Channel MOSFET
IRF830S (KRF830S)
MOSFET
■ Typical Characterisitics
10 ¹ _Top
V _GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10 ⁰ Bottom 4.5 V
4.5 V
20 µs Pulse Width
10 ^-1
T _C = 25 °C
10 ⁰
10 ¹
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T _C = 25 °C
10 ¹ _Top
V _GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10 ⁰ Bottom 4.5 V
4.5 V
10 ^-1
91064_02
20 µs Pulse Width
T _C = 150 °C
10 ⁰
10 ¹
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T _C = 150 °C
1500
1250
1000
750
V _GS = 0 V, f = 1 MHz
C _iss = C_gs + C_gd, C_ds Shorted
C _rss = C_gd
C _oss = C_ds + C_gd
C _iss
500
C _oss
250
0
10 ⁰
C _rss
10 ¹
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 ¹
150 °C
25 °C
10 ⁰
10 ^-1
4
20 µs Pulse Width
V _DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
I_D = 3.1 A
V _GS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-R esistance vs. Temperature
10 ¹
150 °C
10 ⁰
25 °C
V _GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
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