IRF830S Datasheet, PDF (2/6 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

SMD Type
MOSFET
N-Channel MOSFET
IRF830S (KRF830S)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
Test Conditions
ID=250μA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, VGS=0V,TJ=125℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=2.7A (Note.1)
VDS=50V, ID=2.7A (Note.1)
VGS=0V, VDS=25V, f=1MHz
VGS=10V, VDS=400V, ID=3.1A
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of ^G
LS
die contact
S
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
td(on)
tr
td(off)
tf
trr
Qrr
VDD = 250 V, ID = 3.1 A,
Rg = 12Ω, RD = 79Ω (Note.1)
TJ = 25°C, IF = 3.1A, dI/dt = 100A/μs
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
Diode Forward Voltage
VSD
IS=4.5A,VGS=0V,TJ = 25°C
Note.1: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
Min Typ Max Unit
500
V
25
uA
250
±100 nA
2
4
V
1.5 Ω
2.5
S
610
160
pF
68
38
5 nC
22
4.5
nH
7.5
8.2
16
42
ns
16
640
2 uC
4.5
A
18
1.6 V
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