IRF830S Datasheet, PDF (5/6 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

SMD Type
MOSFET
N-Channel MOSFET
IRF830S (KRF830S)
■ Typical Characterisitics
L
V _DS
Vary t_p to obtain
t_p
required I_AS
R_g
10 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^{V DD V DS}
I_AS
V_DS
V _DD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
600
ID
Top
2.0 A
Q_G
500
2.8 A
10 V
Bottom 4.5 A
400
Q _GS
Q _GD
300
200
100
0 ^{V DD = 50 V}
25
50
75
100
125
150
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V_G
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^{V DS}
V _GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.kexin.com.cn ⁵