IRF830S Datasheet, PDF (4/6 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

SMD Type
MOSFET
N-Channel MOSFET
IRF830S (KRF830S)
■ Typical Characterisitics
20
ID = 3.1 A
16
V _DS = 400 V
V _DS = 250 V
12
V _DS = 100 V
8
4
For test circuit
0
see figure 13
0
8
16
24
32
40
Q_G, Total Gate Charge (nC)
10 ²
5
2
10
5
2
1
5
2
0.1
5
2
10 ^-2
0.1 ²
Operation in this area limited
by R_DS(on)
10 µs
100 µs
1 ms
10 ms
5₁ 2
T _C = 25°C
T _J = 150°C
Single Pulse
5 ₁₀ 2 5 _{10 2} 2
5 _{10 3} 2
5 _{10 4}
V_DS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
.
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
Fig. 8 - Maximum Safe Operating Area
R_D
V _DS
V _GS
R_g
D.U.T.
+
-V DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V _DS
90 %
10 %
V _GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
1 D = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
10 ^-2
10 ^-5
P _DM
Single Pulse
(Thermal Response)
t₁
t₂
Notes:
1. Duty Factor, D ₁=/t₂t
2. Peak T_j = P_DM x Z_thJC + T_C
10 ^-4
10 ^-3
10 ^-2
0.1
1
10
t₁, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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